发明名称 |
MICROCRYSTALLINE SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR |
摘要 |
PROBLEM TO BE SOLVED: To form a microcrystalline semiconductor film having a high crystallinity; and to manufacture a thin film transistor having preferable electric characteristics and high reliability and a display device including the thin film transistor, with high mass productivity. SOLUTION: A step in which a deposition gas containing silicon or germanium is introduced at a first flow rate and a step in which the deposition gas containing silicon or germanium is introduced at a second flow rate are repeated while hydrogen is introduced at a fixed rate, to mix the hydrogen and the deposition gas containing silicon or germanium, and a high-frequency power is supplied, whereby the microcrystalline semiconductor film is formed over a substrate. COPYRIGHT: (C)2011,JPO&INPIT |
申请公布号 |
JP2011044704(A) |
申请公布日期 |
2011.03.03 |
申请号 |
JP20100165199 |
申请日期 |
2010.07.22 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
TAJIMA RYOTA;TANAKA TETSUHIRO;TOKUMARU AKIRA;MIYAIRI HIDEKAZU;ICHIJO MITSUHIRO;NOZAWA TAICHI |
分类号 |
H01L21/205;G02F1/1368;G09F9/00;G09F9/30;G09F9/35;H01L21/336;H01L29/786 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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