| 摘要 |
PROBLEM TO BE SOLVED: To form a titanium oxide film having high permittivity at a low temperature. SOLUTION: A capacitor insulation film is formed by carrying out a step (S100) for forming a lower electrode 155 on a wafer 14, a step (S200) for forming an AlO<SB>x</SB>film 160 on a lower electrode 155 interface, a step (S300) for forming an HfAlO<SB>x</SB>film 165 on the AlO<SB>x</SB>film 160, a step (S400) for annealing (heat treatment) the wafer 14 with the HfAlO<SB>x</SB>film 165 formed thereon, a step (S500) for forming a TiO<SB>2</SB>film 170 on the annealed HfAlO<SB>x</SB>film 165, a step (S600) for annealing the wafer 14 with the TiO<SB>2</SB>film 170 formed thereon. An upper electrode 175 is formed on the capacitor insulation film (S700). COPYRIGHT: (C)2011,JPO&INPIT |
