发明名称 |
ACCUMULATION TYPE FINFET, CIRCUITS AND FABRICATION METHOD THEREOF |
摘要 |
A FinFET includes a substrate and a fin structure on the substrate. The fin structure includes a channel between a source and a drain, wherein the source, the drain, and the channel have the first type dopant. The channel includes a Ge, SiGe, or III-V semiconductor. A gate dielectric layer is located over the channel and a gate is located over the gate dielectric layer. |
申请公布号 |
US2011049613(A1) |
申请公布日期 |
2011.03.03 |
申请号 |
US20100757271 |
申请日期 |
2010.04.09 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YEH CHIH CHIEH;CHANG CHIH-SHENG;WANN CLEMENT HSINGJEN |
分类号 |
H01L29/78;H01L21/336;H01L27/088 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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