发明名称 LITHOGRAPHIC APPARATUS, DISTORTION DETERMINATION METHOD AND PATTERNING DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a lithographic apparatus with reduced overlay errors resulting from higher-order distortions of a patterning device. <P>SOLUTION: The lithographic apparatus arranged to transfer a pattern from the patterning device onto a substrate is provided, wherein the apparatus is operable to measure higher-order distortions and/or image plane deviations of the patterning device, the apparatus includes: a device for transmission image detection; and a processor configured and arranged to model higher-order distortions of the patterning device using signals received from the device for transmission image detection; wherein the patterning device has a main imaging field and a perimeter and the apparatus is operable to model the higher-order distortions using signals resultant from alignment structures comprised in the perimeter and/or in the imaging field. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011044711(A) 申请公布日期 2011.03.03
申请号 JP20100181989 申请日期 2010.08.17
申请人 ASML NETHERLANDS BV 发明人 VAN DE KERKHOF MARCUS A;DE KRUIF ROBERTUS CORNELIS MARTINUS
分类号 H01L21/027;G01B11/02;G03F7/20 主分类号 H01L21/027
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