发明名称 |
PLASMA PROCESSING APPARATUS AND FOCUS RING |
摘要 |
A plasma processing apparatus and a focus ring enables to perform uniform plasma processing over the entire surface of a substrate to be processed to thereby improve in-surface uniformity of plasma processing compared with conventional cases. The focus ring is disposed on a susceptor 2, which serves to mount thereon a semiconductor wafer W and further functions as a lower electrode, to surround a periphery of the semiconductor wafer W. The focus ring 6 includes a ring member of a thin plate shape disposed to surround the periphery of the wafer W while maintaining a gap therebetween and a lower ring body installed below the semiconductor wafer and the ring member of the thin plate shape.
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申请公布号 |
US2011048643(A1) |
申请公布日期 |
2011.03.03 |
申请号 |
US20100941701 |
申请日期 |
2010.11.08 |
申请人 |
TOKYO ELECTON LIMITED |
发明人 |
ENDOH SHOSUKE;HIMORI SHINJI |
分类号 |
H01L21/3065;H05H1/46;C23C16/509;C23C16/52;H01J37/32;H01L21/00;H01L21/68 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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