发明名称 PLASMA PROCESSING APPARATUS AND FOCUS RING
摘要 A plasma processing apparatus and a focus ring enables to perform uniform plasma processing over the entire surface of a substrate to be processed to thereby improve in-surface uniformity of plasma processing compared with conventional cases. The focus ring is disposed on a susceptor 2, which serves to mount thereon a semiconductor wafer W and further functions as a lower electrode, to surround a periphery of the semiconductor wafer W. The focus ring 6 includes a ring member of a thin plate shape disposed to surround the periphery of the wafer W while maintaining a gap therebetween and a lower ring body installed below the semiconductor wafer and the ring member of the thin plate shape.
申请公布号 US2011048643(A1) 申请公布日期 2011.03.03
申请号 US20100941701 申请日期 2010.11.08
申请人 TOKYO ELECTON LIMITED 发明人 ENDOH SHOSUKE;HIMORI SHINJI
分类号 H01L21/3065;H05H1/46;C23C16/509;C23C16/52;H01J37/32;H01L21/00;H01L21/68 主分类号 H01L21/3065
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