发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
A semiconductor device includes a gate on a semiconductor substrate. One side wall of the gate may include at least one protrusion and an opposite side wall of the gate may include at least one depression. A contact is formed through an insulating layer disposed over the gate. The contact at least partially overlaps at least one of the protrusions in the gate. A metal layer is disposed on the insulating layer. The metal layer includes a first structure shifted to a first side of the gate. The first structure at least partially overlaps the contact such that the contact electrically couples the first structure to the gate through the insulating layer. |
申请公布号 |
WO2011025718(A1) |
申请公布日期 |
2011.03.03 |
申请号 |
WO2010US46254 |
申请日期 |
2010.08.21 |
申请人 |
ADVANCED MICRO DEVICES, INC.;CARLSON, ANDREW, E. |
发明人 |
CARLSON, ANDREW, E. |
分类号 |
H01L27/02;H01L21/768;H01L21/8234;H01L27/088;H01L29/423 |
主分类号 |
H01L27/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|