| 摘要 |
A film formation apparatus for a semiconductor process for forming a thin film on a target object by use of first and second reactive gases includes a vacuum container, an exhaust system, a rotary table configured to place the target object thereon, a rotating mechanism configured to rotate the rotary table, and a temperature adjusting mechanism configured to set the target object to a temperature at which the first reactive gas is condensed. Inside the vacuum container, a first reactive gas supply section configured to adsorb a condensed substance of the first reactive gas onto the target object, a vaporizing section configured to partly vaporize the condensed substance, and a second reactive gas supply section configured to cause the second reactive gas to react with the condensed substance are disposed in this order in a rotational direction of the rotary table. |
