| 摘要 |
<p>Disclosed is a semiconductor device (100) comprising a semiconductor base (10) which comprises a cell region containing a first semiconductor layer (1) that has a first conductivity type, a second semiconductor layer (2) that is formed in the surface of the first semiconductor layer in the form of an island and has a second conductivity type that is different from the first conductivity type, a third semiconductor layer (3) that is formed in the surface of the second semiconductor layer in the form of an island has the first conductivity type, and a plurality of gate trenches (11) that penetrate through the second semiconductor layer and the third semiconductor layer and reach the inner portion of the first semiconductor layer, and a peripheral region which surrounds the cell region and contains a plurality of peripheral trenches (14) that penetrate through the second semiconductor layer and the third semiconductor layer and reach the inner portion of the first semiconductor layer and an end layer (6) that is formed in the surface of the first semiconductor layer in the form of an island and has the first conductivity type. In the semiconductor base (10), the first semiconductor layer, the second semiconductor layer, the third semiconductor layer and the end layer are not exposed from the surface of the first semiconductor layer on the front side of the first semiconductor layer.</p> |
