| 摘要 |
A method of forming a phase-change random access memory (PRAM) cell and PRAM arrangement, and embodiments of phase-change random access memory (PRAM) cells and PRAM arrangements are disclosed. A phase-change random access memory (PRAM) cell includes a bottom electrode, a heater resistor coupled to the bottom electrode, a phase change material (PCM) coupled to the heater resistor, and a top electrode coupled to the phase change material. An active region between the heater resistor and the phase change material is defined by a thickness of the heater resistor. |
