ULTRAVIOLET LIGHT IRRADIATION DEVICE

摘要

Disclosed is an ultraviolet light irradiation device, which has a simple structure that does not have a pn junction, and which can efficiently utilize surface plasmon polariton. The ultraviolet light irradiation device is capable of emitting ultraviolet light of a specific wavelength highly efficiently. Specifically disclosed is an ultraviolet light irradiation device, wherein at least one semiconductor multilayer film element and an electron beam irradiation source are provided within a container that is vacuum sealed and has an ultraviolet light-transmitting window. The semiconductor multilayer film element comprises an active layer that is composed of InxAlyGa1-x-yN (wherein 0 = x < 1, 0 < y = 1 and x + y = 1) and has a single quantum well structure or a multiple quantum well structure, and a metal film that is formed on the upper surface of the active layer and composed of metal particles of aluminum or an aluminum alloy, said metal particles forming a nanostructure. By irradiating the semiconductor multilayer film element with electron beams from the electron beam irradiation source, ultraviolet light is emitted to the outside through the ultraviolet light-transmitting window.