| 摘要 |
A photovoltaic device that exhibits increased open-circuit voltage and an improved fill factor due to an improvement in the contact properties between the n-layer and a back-side transparent electrode layer or intermediate contact layer, and a process for producing the photovoltaic device. The photovoltaic device (100) comprises a photovoltaic layer (3) having a p-layer (41), an i-layer (42) and an n-layer stacked on top of a substrate (1), wherein the n-layer comprises a nitrogen-containing n-layer (43) and an interface treatment layer (44) formed on the opposite surface of the nitrogen-containing n-layer (44) to the substrate (1), the nitrogen-containing n-layer (43) comprises nitrogen atoms at an atomic concentration of not less than 1% and not more than 20%, and has a crystallization ratio of not less than 0 but less than 3, and the interface treatment layer (44) has a crystallization ratio of not less than 1 and not more than 6. |
