| 摘要 |
A boundary acoustic wave device includes a first medium layer made of a first dielectric material and a second medium layer made of a second dielectric material having an acoustic velocity different from the acoustic velocity of the first dielectric material. The first medium layer and the second medium layer are disposed on a piezoelectric substrate, and an IDT electrode is arranged along the interface between the piezoelectric substrate and the first medium layer. When the fast transverse bulk wave of the piezoelectric substrate has an acoustic velocity V1 and a higher-order mode boundary acoustic wave has an acoustic velocity Va at an anti-resonance point, the boundary acoustic wave device satisfies the relationship Va>V1.
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