| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a piezoelectric thin film element which is free from Pb, can reduce environmental load, has a Q-value which is high and proper piezoelectric characteristics. <P>SOLUTION: The piezoelectric thin film element 1 includes a first electrode 3, a piezoelectric thin film 4 and a second electrode 5 formed on a substrate 2. The piezoelectric thin film 4 is formed of a c-axis orientation film of tungsten bronze crystal of K<SB>3</SB>Li<SB>2</SB>Nb<SB>5</SB>O<SB>15</SB>. The first electrode 3 is, preferably, an electrode film of which an orientation direction is represented by (100), (001), (110), or (101), and the first electrode 3 is, preferably, formed of one or two or more material selected from among the group of LaNiO3, SrRuO3, Ir, Pt, Ru, IrO2 and RuO2. <P>COPYRIGHT: (C)2011,JPO&INPIT |
