| 摘要 |
PROBLEM TO BE SOLVED: To provide a group-III nitride-based field-effect transistor having low ON resistance, and to provide a method of manufacturing the same. SOLUTION: The group-III nitride-based field-effect transistor includes: a base semiconductor layer; a nitride semiconductor laminate comprising a first nitride semiconductor layer, a second nitride semiconductor layer, and a third nitride semiconductor layer laminated in order on the base semiconductor layer; a source electrode and a drain electrode; a recessed region as a region where neither the second nitride semiconductor nor the third nitride semiconductor layer is formed, an insulating film formed on an inner surface of the recessed region and an upper surface of the nitride semiconductor laminate, and a gate electrode formed on the insulating film, wherein no step is formed between an upper surface of the first nitride semiconductor layer coming into contact with the insulating film and an upper surface of the first nitride semiconductor layer coming into contact with the second nitride semiconductor layer. COPYRIGHT: (C)2011,JPO&INPIT
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