发明名称 Manufacturing method of metal oxide nanostructure and electronic element having the same
摘要 Disclosed herein is a manufacturing method of metal oxide nanostructure, including the steps of: (S1) supplying a precursor containing a first metal, a precursor containing a second metal and oxygen onto a substrate; (S2) forming an amorphous second metal oxide layer on the substrate; (S3) forming first nuclei containing the first metal as a main component and second nuclei containing the second metal as a main component on the substrate; (S4) converting the first nuclei into single crystalline seed layers spaced apart from each other and converting the second nuclei into amorphous layers surrounding the first nuclei; and (S5) selectively forming rods on the seed layers and then growing the rods. The manufacturing method of metal oxide nanostructure is advantageous in that the area and thickness of an amorphous layer can be controlled by controlling the flow rate of the main component of the amorphous layer and the flow rate of the main component of the single crystalline seed layer, thereby controlling the density and diameter of the seed layer.
申请公布号 US2011049467(A1) 申请公布日期 2011.03.03
申请号 US20100862895 申请日期 2010.08.25
申请人 SUNGYUNKWAN UNIVERSITY FOUNDATION FOR CORPORATE COLLABORATION 发明人 CHO HYUNG KOUN;KIM DONG CHAN
分类号 H01L29/66;H01L21/34 主分类号 H01L29/66
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