发明名称 |
APPARATUS FOR FORMING DEPOSITED FILM AND METHOD FOR FORMING DEPOSITED FILM |
摘要 |
<p>One embodiment of the apparatus for forming a deposited film according to the present invention comprises a chamber, a first electrode that is arranged within the chamber, and a second electrode that is arranged within the chamber at a predetermined distance from the first electrode. The second electrode comprises a first supply part for supplying a first material gas to the space between the first electrode and the second electrode, a plurality of second supply parts for supplying a second material gas to the space, a first supply path which is connected to the first supply part and through which the first material gas is introduced, and a second supply path which is connected to the second supply parts and through which the second material gas is introduced. The apparatus for forming a deposited film is characterized in that: the second supply path comprises a mainstream part that has a first feed port through which the second material gas is introduced, and a subsidiary stream part that has a plurality of gas channels each having a second feed port through which the second material gas is introduced from the mainstream part; the plurality of second supply parts are respectively connected to the plurality of gas channels of the subsidiary stream; and the mainstream part and the subsidiary stream part are structured so that the second material gas does not directly flow from the first feed port to each second supply part as a rectilinear stream.</p> |
申请公布号 |
WO2011024995(A1) |
申请公布日期 |
2011.03.03 |
申请号 |
WO2010JP64692 |
申请日期 |
2010.08.30 |
申请人 |
KYOCERA CORPORATION;ITO, NORIKAZU;INABA, SHINICHIRO;MATSUI, HIROSHI |
发明人 |
ITO, NORIKAZU;INABA, SHINICHIRO;MATSUI, HIROSHI |
分类号 |
C23C16/507;H01L31/04 |
主分类号 |
C23C16/507 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|