Enhanced method of forming nickel silicides,申请号EP20100173802-传众专利搜索

发明名称	Enhanced method of forming nickel silicides
摘要	<p>Silicon containing substrates are coated with nickel. The nickel is coated with a protective layer and the combination is heated to a sufficient temperature to form nickel silicide. The nickel silicide formation may be performed in oxygen containing environments.</p>
申请公布号	EP2290128(A2)	申请公布日期	2011.03.02
申请号	EP20100173802	申请日期	2010.08.24
申请人	ROHM AND HAAS ELECTRONIC MATERIALS, LLC	发明人	CAHALEN, JOHN P.;HAMM, GARY;ALLARDYCE, GEORGE R.;JACQUES, DAVID L.
分类号	C23C18/14;C23C18/16;C23C18/32;C25D5/12;C25D5/50;C25D7/12;H01L21/285;H01L21/288;H01L21/768	主分类号	C23C18/14
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