SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device and a method of manufacturing the same are provided to optimize conditions of forming a thin film by using a doped polysilicon as an electrode and a wiring to suppress stress supplied to a semiconductor substrate from a first insulating film. CONSTITUTION: A semiconductor substrate(1) comprises a first main surface(10) and a second main surface(20). A plurality of electrodes(30a,30b) are formed in longitudinal direction of the semiconductor substrate from the first main surface. A wiring part(40a) is formed in longitudinal direction of the semiconductor substrate from the first main surface without penetrating the semiconductor substrate. The first insulating layer(3) is formed between an electrode and the wring part. The first electrode of electrodes penetrates the semiconductor substrate to reach to the second main surface.