发明名称 POWER SEMICONDUCTOR MODULE
摘要 <p>A power semiconductor module (1) includes a first MOS transistor (16) connected to a positive side power supply terminal via a first conductor pattern (11), a first free wheeling diode (17) connected to the positive side power supply terminal via a second conductor pattern (12), a second MOS transistor (18) connected to a negative side power supply terminal via a third conductor pattern (13), and a second free wheeling diode (19) connected to the negative side power supply terminal via a fourth conductor pattern (14). These semiconductor elements (16-19) are connected to a load side output terminal via a common fifth conductor pattern (15). The semiconductor element (16, 17) connected to the positive side power supply terminal and the semiconductor element (18, 19) connected to the negative side power supply terminal are arranged alternately, substantially linearly.</p>
申请公布号 KR20110020294(A) 申请公布日期 2011.03.02
申请号 KR20117000408 申请日期 2009.04.23
申请人 MITSUBISHI ELECTRIC CORPORATION 发明人 NAKATA SHUHEI
分类号 H01L25/07;H01L25/18 主分类号 H01L25/07
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