Method for manufacturing light emitting diodes

摘要

A light emitting diode comprising:
a conductive substrate (320);
a bonding layer (322) on the conductive substrate;
a UBM layer (318) on the bonding layer, the UBM layer having a multi-layer structure;
a first electrode (316) on the UBM layer;
a first-type semiconductor layer (315) on the first electrode;
an active layer (314) on the first-type semiconductor layer;
a second-type semiconductor layer (3t3) on the active layer, the second-type semiconductor layer comprising a light extraction pattern (313a); and
a second electrode (330) on the second-type semiconductor layer.