Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same

摘要

A nitride semiconductor light-emitting device comprising:
an n-type nitride semiconductor layer (2); p-type nitride semiconductor layer (3); and an active layer (4) formed of a nitride semiconductor between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer,
wherein at least the p-type nitride semiconductor layer (3) and the active layer (4) define a frustum layered composite, and the layered composite is embedded in a metal member (7) so that the periphery of the layered composite is isolated.