| 摘要 |
<p>Provided is an IGFET capable of turning off when a reverse voltage is applied. The IGFET includes an n + -type first drain region (6), an n - -type second drain region (7), a p-type first body region (8), a p - -type second body region (9), an n-type first source region (10a), and an n + -type second source region (10b). Gate insulators (5) and gate electrodes (4) are arranged in trenches (11) formed on a semiconductor substrate (1). The source electrode (3) is in ohmic contact with the n-type first source region (10a) and the n + -type second source region (10b) and in schottky barrier contact with the p-- type second body region (9).</p> |
