发明名称 Method for transferring a predetermined pattern reducing proximity effects
摘要 A method for transferring a predetermined pattern onto a flat support performed by direct writing by means of a particle beam comprises at least: deposition of a photoresist layer on a free surface of the support, application of the beam on exposed areas of the photoresist layer, performing correction by modulation of exposure doses received by each exposed area, developing of the photoresist layer so as to form said pattern. Correction further comprises determination of a substitution pattern (11) comprising at least one subresolution feature and use of the substitution pattern (11) for determining the areas to be exposed when the electron beam is applied. In addition, modulation takes account of the density of the substitution pattern (11) near to each exposed area.
申请公布号 US7897308(B2) 申请公布日期 2011.03.01
申请号 US20060226973 申请日期 2006.05.05
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE;FREESCALE SEMICONDUCTOR, INC. 发明人 PAIN LAURENT;MANAKLI SERDAR;BERVIN GEORGES
分类号 G03F9/00;G03C5/00 主分类号 G03F9/00
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