发明名称 |
Structure for plasma processing chamber, plasma processing chamber, plasma processing apparatus, and plasma processing chamber component |
摘要 |
A structure for a plasma processing chamber which makes it possible to control the potential therein and simplify the construction of the plasma processing chamber. A gas-introducing showerhead 34 is disposed in the plasma processing chamber 10 including a container 11 having a process space S for receiving a semiconductor wafer W, and a susceptor 12 disposed in the container 11, for mounting the received semiconductor wafer W thereon. The susceptor 12 is connected to high-frequency power supplies 20 and 46. An electrode support 39 of the gas-introducing showerhead 34 is electrically grounded. An electrically floating top electrode plate 38 of the gas-introducing showerhead 34 is disposed between the electrode support 39 and the process space S. The top electrode plate 38 has a surface exposed to the process space S. An insulating film 48 is formed of a dielectric material and disposed between the electrode support 39 and the top electrode plate 38.
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申请公布号 |
US7895970(B2) |
申请公布日期 |
2011.03.01 |
申请号 |
US20060529372 |
申请日期 |
2006.09.29 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
HONDA MASANOBU;HAYAMI TOSHIHIRO;MATSUI YUTAKA |
分类号 |
C23C16/00;C23F1/00;H01L21/306 |
主分类号 |
C23C16/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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