发明名称 Semiconductor device and method for manufacturing the same
摘要 A semiconductor device includes: an insulating film provided on a back surface of a semiconductor substrate; a plurality of isolation regions provided to reach the insulating film from a main surface of the semiconductor substrate; at least a first semiconductor layer and a second semiconductor layer which are electrically insulated from each other by the isolation regions in the semiconductor substrate; a first voltage applied terminal electrically connected to a front surface of the first semiconductor layer; a second voltage applied terminal electrically connected to a front surface of the second semiconductor layer; a selector circuit receiving voltages from the first voltage applied terminal and the second voltage applied terminal, and supplying an output in accordance with a combination of the voltages; and a conductive layer provided so as to contact with the insulating film provided to the back side of the semiconductor substrate.
申请公布号 US7897996(B2) 申请公布日期 2011.03.01
申请号 US20090349174 申请日期 2009.01.06
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 TASHIBU MASAKAZU;HONNA KATSU;JINNAI ATSUSHI
分类号 H01L29/739 主分类号 H01L29/739
代理机构 代理人
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