| 摘要 |
A magnetic memory includes a magnetic tunneling junction element having a reference layer, a tunnel barrier layer and a recording layer laminated in order, with information being written to the recording layer in accordance with spin injection magnetization reversal caused by a current, and information written to the recording layer being read out using a current. The magnetic tunneling junction element is disposed on a plug connected to a selection transistor, and a sidewall insulating film covering a side portion of the recording layer of the magnetic tunneling junction element is formed.
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