发明名称 Device manufacturing method and computer program product
摘要 A method of forming features, e.g. contact holes, at a higher density than is possible with conventional lithographic techniques involves forming an array of sacrificial positive features, conformally depositing a sacrificial layer so that negative features are formed interleaved with the positive features, directionally etching the sacrificial layer and removing the sacrificial features. The result is an array of holes at a higher density than the original sacrificial features. These may then be transferred into the underlying substrate using a desired process. Also, the method may be repeated to create arrays at even higher densities.
申请公布号 US7897058(B2) 申请公布日期 2011.03.01
申请号 US20060435296 申请日期 2006.05.17
申请人 ASML NETHERLANDS B.V.;ASML HOLDING NV 发明人 VAN HAREN RICHARD JOHANNES FRANCISCUS;VAN DER SCHAAR MAURITS;VREUGDENHIL EWOUD;SEWELL HARRY
分类号 C23F1/00;B44C1/22;G01L21/30;G06F19/00 主分类号 C23F1/00
代理机构 代理人
主权项
地址