| 发明名称 |
Inducement of strain in a semiconductor layer |
| 摘要 |
Strain is induced in a semiconductor layer. Embodiments include inducing strain by, for example, creation of free surfaces.
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| 申请公布号 |
US7897493(B2) |
申请公布日期 |
2011.03.01 |
| 申请号 |
US20070952514 |
申请日期 |
2007.12.07 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
FIORENZA JAMES;CARROLL MARK;LOCHTEFELD ANTHONY J. |
| 分类号 |
H01L21/20;H01L21/36 |
主分类号 |
H01L21/20 |
| 代理机构 |
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