发明名称 Apparatus and method for wafer level fabrication of high value inductors on semiconductor integrated circuits
摘要 Methods for forming multiple inductors on a semiconductor wafer are described. A plating layer and a photoresist layer are applied over a semiconductor wafer. Recess regions are etched in the photoresist layer using photolithographic techniques, which exposes portions of the underlying plating layer. Metal is electroplated into the recess regions in the photoresist layer to form multiple magnetic core inductor members. A dielectric insulating layer is applied over the magnetic core inductor members. Additional plating and photoresist layers are applied over the dielectric insulating layer. Recess regions are formed in the newly applied photoresist layer. Electroplating is used to form inductor windings in the recess regions. Optionally, a magnetic paste can be applied over the inductor coils.
申请公布号 US7897472(B2) 申请公布日期 2011.03.01
申请号 US20090624259 申请日期 2009.11.23
申请人 NATIONAL SEMICONDUCTOR CORPORATION 发明人 HOPPER PETER J.;JOHNSON PETER;HWANG KYUWOON;PAPOU ANDREI
分类号 H01L21/20 主分类号 H01L21/20
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