发明名称 DEPLETION-LESS PHOTODIODE WITH SUPPRESSED DARK CURRENT
摘要 The invention relates to a photo-detector with a reduced G-R noise, which comprises a sequence of a p-type contact layer, a middle barrier layer and an n-type photon absorbing layer, wherein the middle barrier layer has an energy bandgap significantly greater than that of the photon absorbing layer, and there is no layer with a narrower energy bandgap than that in the photon-absorbing layer.
申请公布号 IL156744(A) 申请公布日期 2011.02.28
申请号 IL20030156744 申请日期 2003.07.02
申请人 SEMI-CONDUCTOR DEVICES - AN ELBIT SYSTEMS - RAFAEL PARTNERSHIP 发明人
分类号 H01L;H01L31/101;H01L31/109 主分类号 H01L
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