<p>PURPOSE: A method for manufacturing a nano-wire transistor is provided to reduce cost required for manufacturing processes by effectively arranging a plurality of nano-wires between a source electrode and a drain electrode using dielectrophoresis method. CONSTITUTION: A source electrode and a drain electrode are formed on a substrate(S102). A gate electrode is formed between the source electrode and the drain electrode(S104). A gate insulator is formed on the gate electrode(S106). A nano-wire solution including nano-wire is applied on the substrate(S108). An alternating current signal is applied between the source electrode and the drain electrode(S110). The solution of the nano-wire is evaporated(S112).</p>
