摘要 |
<p>A method of fabricating vapor cells comprises forming a plurality of vapor cell dies (302) in a first wafer (300) having an interior surface region (306) and a perimeter (308), and forming a plurality of interconnected vent channels (302) in the first wafer. The vent channels provide at least one pathway for gas from each vapor cell die to travel outside of the perimeter of the first wafer. The method further comprises anodically bonding a second wafer to one side of the first wafer, and anodically bonding a third wafer to an opposing side of the first wafer. The vent channels allow gas toward the interior surface region of the first wafer to be in substantially continuous pressure-equilibrium with gas outside of the perimeter of the first wafer during the anodic bonding of the second and third wafers to the first wafer.</p> |