Process for manufacturing a thermoelectric cooler for the Chip substrate

摘要

The invention relates to processes for manufacturing a thermoelectric cooler for the Chip substrate and may find its application in various fields of microelectronics, computer engineering, medicine and other fields, requiring heat removal.The process for manufacturing a thermoelectric cooler for the Chip substrate consists in that the Chip substrate made of silicon is treated chemically, annealed at a temperature of 1073K for 3...5 min in an ultrahigh vacuum chamber. Then, it is applied thereon a double intermediate layer based on fluorides, at a temperature of 973K, composed of a CaF2 layer of a thickness of 2...3 nm and a BaF2 layer of a thickness of about 150 nm, at a speed of 0.1 nm/s. On the double intermediate layer is applied a thermoelectric transforming layer made of a semiconductor material of A4B6 type, on which is paced a radiator with a fan.