发明名称 METHOD OF PREPARING AN ELECTRICAL INSULATION FILM AND APPLICATION FOR THE METALLIZATION OF THROUGH-VIAS
摘要 The present invention essentially relates to a method of preparing an electrically insulating film at the surface of an electrical conductor or semiconductor substrate, such as a silicon substrate. According to the invention, this method comprises: a) bringing said surface into contact with a liquid solution comprising: a protic solvent; at least one diazonium salt; at least one monomer that is chain-polymerizable and soluble in said protic solvent; at least one acid in a sufficient quantity to stabilize said diazonium salt by adjusting the pH of said solution to a value less than 7, preferably less than 2.5; b) the polarization of said surface according to a potentio- or galvano-pulsed mode for a duration sufficient to form a film having a thickness of at least 60 nanometers, and preferably between 80 and 500 nanometers. Application: Metallization of through-vias, especially of 3D integrated circuits.
申请公布号 IL210122(D0) 申请公布日期 2011.02.28
申请号 IL20100210122 申请日期 2010.12.20
申请人 ALCHIMER 发明人
分类号 C09D 主分类号 C09D
代理机构 代理人
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