| 摘要 |
<p>The invention relates to method for fabricating a semiconductor on insulator substrate comprising the steps of: a) providing a first semiconductor substrate with a first impurity density of a first impurity type, b) subjecting the first semiconductor substrate to a first thermal treatment to thereby reduce the first impurity density in a modified layer adjacent one main surface of the first semiconductor substrate, c) transferring at least partially the modified layer with the reduced first impurity density onto a second substrate, to thereby obtain a modified second substrate, and d) providing a layer, in particular par epitaxial growth, with a second impurity density of a second impurity type different to the first impurity type. By doing so, a contamination by dopants of the second impurity type of a fabrication line using semiconductor material with dopants of the first impurity type, can be prevented. FIG. 1a-1i</p> |
