发明名称 SEMICONDUCTOR X-RAY COMPOSITE DETECTOR
摘要 FIELD: physics. ^ SUBSTANCE: X-ray Si and Ge detectors lying one directly behind the other are used to detect radiation. The thin (about 0.5 mm) Si detector is closer to the source of ionising radiation and functions as the main detector of incident radiation with energy of up to 10 keV and as a photon detector of K photo-loss of the Ge detector at low energy of the primary radiation. ^ EFFECT: invention enables suppression of the K photo-loss peak of the Ge detector, preservation of the high probability of detecting a photon at the total absorption peak, which is characteristic for the Ge detector for photons with energy higher than 30 keV. ^ 2 cl, 7 dwg
申请公布号 RU2413244(C2) 申请公布日期 2011.02.27
申请号 RU20090118070 申请日期 2009.05.12
申请人 GOSUDARSTVENNOE OBRAZOVATEL'NOE UCHREZHDENIE VYSSHEGO PROFESSIONAL'NOGO OBRAZOVANIJA IRKUTSKIJ GOSUDARSTVENNYJ UNIVERSITET PUTEJ SOOBSHCHENIJA (IRGUPS (IRIIT)) 发明人 PORTNOJ ALEKSANDR JUR'EVICH;PAVLINSKIJ GELIJ VENIAMINOVICH;GORBUNOV MIKHAIL SERGEEVICH
分类号 G01T1/24 主分类号 G01T1/24
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