发明名称 |
SEMICONDUCTOR X-RAY COMPOSITE DETECTOR |
摘要 |
FIELD: physics. ^ SUBSTANCE: X-ray Si and Ge detectors lying one directly behind the other are used to detect radiation. The thin (about 0.5 mm) Si detector is closer to the source of ionising radiation and functions as the main detector of incident radiation with energy of up to 10 keV and as a photon detector of K photo-loss of the Ge detector at low energy of the primary radiation. ^ EFFECT: invention enables suppression of the K photo-loss peak of the Ge detector, preservation of the high probability of detecting a photon at the total absorption peak, which is characteristic for the Ge detector for photons with energy higher than 30 keV. ^ 2 cl, 7 dwg |
申请公布号 |
RU2413244(C2) |
申请公布日期 |
2011.02.27 |
申请号 |
RU20090118070 |
申请日期 |
2009.05.12 |
申请人 |
GOSUDARSTVENNOE OBRAZOVATEL'NOE UCHREZHDENIE VYSSHEGO PROFESSIONAL'NOGO OBRAZOVANIJA IRKUTSKIJ GOSUDARSTVENNYJ UNIVERSITET PUTEJ SOOBSHCHENIJA (IRGUPS (IRIIT)) |
发明人 |
PORTNOJ ALEKSANDR JUR'EVICH;PAVLINSKIJ GELIJ VENIAMINOVICH;GORBUNOV MIKHAIL SERGEEVICH |
分类号 |
G01T1/24 |
主分类号 |
G01T1/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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