CHARGE-TRAPPING MEMORY ARRAYS RESISTANT TO DAMAGE FROM CONTACT HOLE FORMATION

摘要

The present invention relates to a memory array comprising a substrate and a plurality of bitlines having contacts and a plurality of wordlines intersecting the bitlines. A protective spacer is used to separate the bitline contacts from the wordlines adjacent to the bitline contacts to prevent damage caused during the formation of the bitline contacts. The present invention also relates to a method of forming the memory array.