METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to improve the throughput by processing the oxide semiconductor layer, located on a gate insulating layer, into an island shape oxide semiconductor layer using a wet etching technique. CONSTITUTION: A gate electrode(202) is formed on a substrate(200) with an insulating surface. A gate insulating layer(204) is formed on the gate electrode. An oxide semiconductor layer(206) is formed on the gate insulating layer. A resist-mask(208) is formed on the oxide semiconductor layer. The oxide semiconductor layer is etched selectively, and an island shape oxide semiconductor layer(210) is formed.