| 摘要 |
<p>The invention relates to a method for making a semiconducting structure, including: a) forming, on the surface of a semiconductor substrate (2), called the final substrate, a semiconducting layer (4), doped with elements from columns III and V of the Periodic Table so as to form a ground plane, b) forming a dielectric layer (3), c) then assembling, by direct adhesion of the source substrate, on the final substrate (2), the layer (4) forming the ground plane between the final substrate and the source substrate, the dielectric layer being between the source substrate and the ground plane, d) then thinning the source substrate, leaving, on the surface of the semiconductor structure, a film (20) made from a semiconducting material.</p> |
