PURPOSE: A method for manufacturing a semiconductor device is provided to prevent a silicide gate pattern from being tilted or broken by supplying a silicon source with sufficient quantity in a silicide process. CONSTITUTION: A gate pattern(31) is formed on a substrate. A first interlayer insulation layer is formed on the entire structure with the gate pattern. A conductive spacer is formed to surround the gate pattern. A metal layer(34) is formed on the spacer for a silicide process. A spacer and a gate pattern are silicidated by using the metal layer.
