| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem that when plasma etching with a chlorine gas is performed on an AlNd layer with an Nd addition of 2 at% which has heat resistance of about 400°C against a hillock, a region called a fence is generated where reaction products are deposited, and due to the presence of the fence, there is a possibility that in forming TFT using the AlNd layer as a gate electrode, the electrical property of TFT becomes unstable because an electrically unstable region is formed at the side of the gate electrode. SOLUTION: The AlNd layer 203 is formed with a thickness of not less than 0.45μm and not more than 0.8μm, and an Nd content of not less than 0.5 at% and not more than 1.0 at%. In this condition range, the generation of the fence is controlled even when plasma etching is performed mainly using the chlorine gas. Further, since the substrate temperature is raised to 500°C, a silicon oxide layer having high reliability as an interlayer insulating layer 211 is formed without generating the hillock in the AlNd layer 203, and thereby a highly reliable TFT 220 is provided. COPYRIGHT: (C)2011,JPO&INPIT |
