发明名称 Methods of Manufacturing Solid State Image Pickup Devices
摘要 A method of manufacturing a solid state image pickup device having a plurality of pixels each including a photoelectric conversion region for converting light into a signal charge, and a plurality of wiring layers including first and second wiring layers. The method includes steps of forming the first wiring layer as a pattern by dividing a desired pattern into a plurality of patterns, connecting the divided patterns, and exposing the plurality of patterns, and forming the second wiring layer as a pattern by batch exposure processing. A connecting position along which the divided patterns are connected is arranged in a pixel area in which the plurality of pixels are arranged. The wiring included in the first wiring layer is formed by a vertical direction wiring arranged in parallel with and not crossing the connecting position in the pixel area, and the wiring included in the second wiring layer is formed by a horizontal direction wiring arranged in parallel with and crossing the connecting position in the pixel area.
申请公布号 US2011045632(A1) 申请公布日期 2011.02.24
申请号 US20100911844 申请日期 2010.10.26
申请人 CANON KABUSHIKI KAISHA 发明人 ITANO TETSUYA;INUI FUMIHIRO;OQURA MASANORI
分类号 H01L27/14;H01L31/18;G03F7/20;H01L21/027;H01L27/146 主分类号 H01L27/14
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