| 摘要 |
Single-source silyl-germanes hydrides can be used to deposit Gei_xSix seamlessly, conformally and selectively in the “source/drain” regions of prototypical transistors, leading to potentially significant performance gains derived from mobility enhancement, and applications in optoelectronics. Low-temperature heteroepitaxy (300-430° C.) produces monocrystalline microstructures, smooth and continuous surface morphologies and low defect densities. Strain engineering can be achieved by incorporating the entire SiGe content of precursors into the film.
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