METHOD AND APPARATUS FOR MEASURING WAFER BIAS POTENTIAL
摘要
A device for use in a wafer processing chamber having a plasma forming volume and a hot edge ring. The hot edge ring has a first surface and a second surface. The first surface is in contact with the plasma forming volume. The second surface is not in contact with the plasma forming volume. The device includes a detector operable to contact the second surface of the hot edge ring. The detector can detect a parameter of the hot edge ring and can provide a detected signal based on the detected parameter.
申请公布号
WO2011021160(A2)
申请公布日期
2011.02.24
申请号
WO2010IB53735
申请日期
2010.08.18
申请人
LAM RESEARCH CORPORATION;LAM RESEARCH AG;MAKHRATCHEV, KONSTANTIN;VALCORE, JOHN