| 摘要 |
<p>Provided is a semiconductor device manufacturing method wherein a cavity can be excellently formed around a wiring structure. The semiconductor device manufacturing method has: a step of forming a first insulating film (13) above a semiconductor substrate (1); a step of forming, on the first insulating film (13), a second insulating film (14) having etching characteristics different from those of the first insulating film (13); a step of forming an opening section (14a) on the first insulating film (13) and the second insulating film (14); a step of forming a cavity (17) by widening the opening section (13) by etching the first insulating film (13) from inside the opening section (14a); a step of forming a third insulating film (18) inside the opening section (14a) while leaving the cavity (17); and a step of forming a conductive film (19) inside the opening section (14a) after forming the third insulating film (18).</p> |
