| 摘要 |
A method of making a semiconductor device includes forming an under-film layer over bumps disposed on a surface of a wafer to completely cover the bumps, and forming an adhesive layer over the under-film layer. The method further includes attaching a support layer over the adhesive layer, removing a portion of a back surface of the wafer, and removing the support layer to expose the adhesive layer that remains disposed over the under-film layer. The method further includes removing the adhesive layer to expose the under-film layer while the bumps remain completely covered by the under-film layer, and singulating the wafer to form a semiconductor die. The method further includes pressing the bumps into contact with a substrate while the under-film layer provides an underfill between the semiconductor die and the substrate.
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