| 摘要 |
Disclosed is a sputtering device wherein a target (2) is disposed offset with respect to a substrate (7), wherein said sputtering device can ensure a uniform amount of deposition, even when a substrate support holder (6) has a low number of rotations of several rotations to several tens of rotations, and the amount of deposition is extremely small, such as a film thickness of 1 nm or less. A control unit (11) is provided to perform control using input of the values of a total whole number of rotations N and a fractional number of rotations α such that X=N+α (where N is the total whole number of rotations and is a positive whole number, and α is the fractional number of rotations and is a positive pure decimal) and, by input of the value of a deposition time T such that the rotational velocity V (rps) of the aforementioned substrate support holder (6) satisfies V·T=N+α when the total number of rotations of the aforementioned substrate support holder (6) is X, during the deposition time of T (seconds) for particles sputtered onto the surface of the aforementioned substrate (7) where a film is to be formed.
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