METHODS OF MAKING VERTICAL JUNCTION FIELD EFFECT TRANSISTORS AND BIPOLAR JUNCTION TRANSISTORS WITHOUT ION IMPLANTATION AND DEVICES MADE THEREWITH

摘要

Methods of making semiconductor devices such as vertical junction field effect transistors (VJFETs) or bipolar junction transistors (BJTs) are described. The methods do not require ion implantation. The VJFET device has an epitaxially regrown n-type channel layer and an epitaxially regrown p-type gate layer as well as an epitaxially grown buried gate layer. Devices made by the methods are also described.