| 摘要 |
<P>PROBLEM TO BE SOLVED: To enhance a numerical aperture of a semiconductor device using an oxide semiconductor. <P>SOLUTION: This semiconductor device includes a driving circuit portion and a display portion (called as a pixel portion), on the same substrate, the driving circuit portion includes a channel etched type thin film transistor for a driving circuit with a source electrode and a drain electrode constituted of metal and with a channel layer constituted of the oxide semiconductor, and a wire for the driving circuit constituted of metal, and the display portion includes a channel protective type thin film transistor for a pixel with a source electrode layer and a drain electrode layer constituted of the oxide conductor, and with a semiconductor layer constituted of the oxide semiconductor, and a wire for the display portion constituted of an oxide conductor. <P>COPYRIGHT: (C)2011,JPO&INPIT |
