| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist composition which generates little foreign matters and enables to form a good pattern and a pattern forming method. <P>SOLUTION: The resist composition is a chemically amplified photoresist composition including an acid generator, a resin and a surfactant, wherein the surfactant is a surfactant including a polyether-modified silicone compound. The pattern forming method includes: (1) a step of applying the chemically amplified photoresist composition onto a substrate; (2) a step of forming a composition layer by removing the solvent from the applied composition; (3) a step of exposing the composition layer with an exposure machine; (4) a step of heating the composition layer after exposure; and (5) a step of developing the composition layer after heating with a developing device. <P>COPYRIGHT: (C)2011,JPO&INPIT |
